Laser cutting method for semiconductors, comprises depositing cover layer on side to be cut and removing after cutting

摘要

A cover layer (3) is deposited on the side of the semiconductor facing the laser (4), then the semiconductor is cut and then at least part of the cover layer is removed. The material can be modified by light and is removed by rinsing with liquid. An independent claim is also included for a semiconductor with a removable top layer comprising a material which can be modified by electromagnetic radiation.