发明名称 METHOD AND CIRCUIT FOR CONTROLLING BIAS CURRENT OF SEMICONDUCTOR DEVICE, ESPECIALLY INCLUDING A SERIAL RESISTER STORING FUSE CUTTING INFORMATION
摘要 PURPOSE: A method and a circuit for controlling the bias current of a semiconductor device are provided to exactly control the bias current by obtaining the fuse cutting information rapidly and exactly with use of the serial resister. CONSTITUTION: A method for controlling the bias current of a semiconductor device includes the steps of: measuring(S21) the bias current generated at a predetermined bias circuit at the wafer state and determining whether the measured bias current falls within a specific range or not; finely adjusting(S23) the bias current by selectively cutting the plurality of the fuses; reading(S24) the information for the fuse cutting by the external command applied from the outside of chip; storing(S25) the information for the fuse cutting on the serial register; and determining(S26) the accuracy for the fuse cutting by reading the information of the fuse cutting stored at the serial register.
申请公布号 KR20040105056(A) 申请公布日期 2004.12.14
申请号 KR20030035902 申请日期 2003.06.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, JANG SEOK;LEE, IK JU
分类号 G11C5/14;(IPC1-7):G11C5/14 主分类号 G11C5/14
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