发明名称 |
Shallow trench isolation using low dielectric constant insulator |
摘要 |
A shallow trench isolation is disclosed wherein the trench depth is reduced beyond that achieved in prior art processes. The reduced trench depth helps to eliminate the formation of voids during the trench refill process and provides for greater planarity in the final isolation structure. Effective device isolation is achieved with a reduced trench depth by utilizing refilling dielectric materials having low dielectric constant.
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申请公布号 |
US6831347(B1) |
申请公布日期 |
2004.12.14 |
申请号 |
US19970932228 |
申请日期 |
1997.09.17 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SCHUEGRAF KLAUS F.;AHMAD AFTAB |
分类号 |
H01L21/762;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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