Semiconductor device with semiconductor chip formed by using wide gap semiconductor as base material

摘要

A switching chip (101) using silicon as the base material is located on the upper surface of a cooling mechanism formed of a heat sink (115), an insulating substrate (114) and a conductive plate (108), with a first conductive layer (109A) sandwiched in between. Further, a diode chip (102) having a smaller area than a cathode electrode (103) and using a wide gap semiconductor as the base material is located on the cathode electrode (103) which has a smaller area than an anode electrode (105), with a second conductive layer (109B) sandwiched in between. A closed container (117) encloses every structural component except an exposed portion of a bottom surface (115BS) in the interior space.