发明名称 Method of forming a novel top-metal fuse structure
摘要 A method of forming a top-metal fuse structure comprising the following steps. A structure having an intermetal dielectric layer is formed thereover the structure including a fuse region and an RDL/bump/bonding pad region. A composite metal layer is formed over the intermetal dielectric layer. The composite metal layer including a second metal layer sandwiched between upper and lower first metal layers. The upper first metal layer is patterned to form an upper metal layer portion within the RDL/bump/bonding pad region. The second metal layer and the lower first metal layer are patterned: (1) within the RDL/bump/bonding pad region to form an RDL/bump/bonding pad; the RDL/bump/bonding pad having a patterned second metal layer portion/lower first metal portion with a width greater than that of the upper metal layer portion and forming a step profile; and (2) within the fuse region to form the top-metal fuse structure. The RDL/bump/bonding pad structure includes a step profile.
申请公布号 US6831349(B2) 申请公布日期 2004.12.14
申请号 US20030679737 申请日期 2003.10.06
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHUANG HARRY
分类号 H01L21/60;H01L23/525;(IPC1-7):H01L29/00 主分类号 H01L21/60
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