发明名称 |
Method of forming a novel top-metal fuse structure |
摘要 |
A method of forming a top-metal fuse structure comprising the following steps. A structure having an intermetal dielectric layer is formed thereover the structure including a fuse region and an RDL/bump/bonding pad region. A composite metal layer is formed over the intermetal dielectric layer. The composite metal layer including a second metal layer sandwiched between upper and lower first metal layers. The upper first metal layer is patterned to form an upper metal layer portion within the RDL/bump/bonding pad region. The second metal layer and the lower first metal layer are patterned: (1) within the RDL/bump/bonding pad region to form an RDL/bump/bonding pad; the RDL/bump/bonding pad having a patterned second metal layer portion/lower first metal portion with a width greater than that of the upper metal layer portion and forming a step profile; and (2) within the fuse region to form the top-metal fuse structure. The RDL/bump/bonding pad structure includes a step profile.
|
申请公布号 |
US6831349(B2) |
申请公布日期 |
2004.12.14 |
申请号 |
US20030679737 |
申请日期 |
2003.10.06 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHUANG HARRY |
分类号 |
H01L21/60;H01L23/525;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/60 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|