发明名称 Amorphous alloys for magnetic devices
摘要 An amorphous layer of a cobalt iron-based (CoFe-based) magnetic alloy suitable for use in magnetoelectronic devices is disclosed. In the most preferred embodiments of the present invention, at least one amorphous layer is provided in an MTJ stack to increase the smoothness of the various layers in the MTJ stack while also enhancing the magnetic performance of the resulting device. Additionally, the alloys of the present invention are also useful in cladding applications to provide electrical flux containment for signal lines in magnetoelectronic devices and as a material for fabricating write heads.
申请公布号 US6831312(B2) 申请公布日期 2004.12.14
申请号 US20020232164 申请日期 2002.08.30
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 SLAUGHTER JON M.;DAVE RENU W.;PIETAMBARAM SRINIVAS V.
分类号 G11B5/39;G01R33/09;G11C11/15;H01F10/13;H01F10/32;H01F41/30;H01L21/8246;H01L27/105;H01L43/08;H01L43/10;(IPC1-7):H01L31/119 主分类号 G11B5/39
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