发明名称 Electron beam exposure apparatus, reduction projection system, and device manufacturing method
摘要 A blur and image distortion of an electron beam on a sample are reduced even at a large converging angle of the electron beam. A reduction projection optical system (120) has an immersion lens (108) on the image plane (wafer 111) side. A collimator lens (pupil control optical system) 106 is arranged between the reduction projection optical system (120) and its object plane (mask 104). The collimator lens (106) arranges the entrance pupil (110) of the reduction projection optical system (120) at a finite position from the image plane on the downstream side of the image plane of the reduction projection optical system (120). This can minimize any blur and image distortion of an electron beam on a sample.
申请公布号 US6831260(B2) 申请公布日期 2004.12.14
申请号 US20020150153 申请日期 2002.05.20
申请人 CANON KABUSHIKI KAISHA 发明人 GOTO SUSUMU
分类号 G21K5/04;G03F7/20;H01J37/141;H01J37/21;H01J37/305;H01J37/317;H01L21/027;(IPC1-7):G01J40/00;H01J40/00 主分类号 G21K5/04
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