FORMING METHOD OF GATE ELECTRODE USING RECESS REGION IN CONDUCTIVE LAYER FOR FORMING GATE ELECTRODE AND DIELECTRIC SPACER AT SIDE WALL OF RECESS REGION

摘要

PURPOSE: A forming method of a gate electrode is provided to reduce notch defect, thereby obtaining a gate electrode having a smooth profile by using a recess region in a conductive layer for forming a gate electrode and a dielectric spacer at the side wall of the recess region before completing the formation of the gate electrode. CONSTITUTION: A gate insulating layer(20) is formed on a semiconductor substrate(10). A conductive layer(30) is formed on the gate insulating layer. A capping pattern(41) is formed on the conductive layer. The portion of the conductive layer is etched using the capping pattern as a mask, thereby forming a recess region(31) in the conductive layer. A dielectric spacer(51) is formed at the side wall of the recess region. The remaining conductive layer is etched using the capping pattern and the dielectric spacer as a mask, thereby exposing the gate insulating layer and forming the gate electrode.