发明名称 |
Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes |
摘要 |
In one implementation, a plasma etching method comprises forming a GexSey chalcogenide comprising layer over a substrate. A mask comprising an organic masking material is formed over the GexSey chalcogenide comprising layer. The mask comprises a sidewall. At least prior to plasma etching the GexSey comprising layer, the sidewall of the mask is exposed to a fluorine comprising material. After exposing, the GexSey chalcogenide comprising layer is plasma etched using the mask and a hydrogen containing etching gas. The plasma etching forms a substantially vertical sidewall of the GexSey chalcogenide comprising layer which is aligned with a lateral outermost extent of the sidewall of the mask.
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申请公布号 |
US6831019(B1) |
申请公布日期 |
2004.12.14 |
申请号 |
US20020232757 |
申请日期 |
2002.08.29 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LI LI;GILTON TERRY L.;KO KEI-YU;MOORE JOHN T.;SIGNORINI KAREN |
分类号 |
H01L21/3105;H01L21/314;H01L45/00;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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