发明名称 |
Improved gate dielectric quality for replacement metal gate transistors |
摘要 |
Gate dielectric degradation due to plasma damage during replacement metal gate processing is cured and prevented from further plasma degradation by treatment of the gate dielectric after removing the polysilicon gate. Embodiments include low temperature vacuum annealing after metal deposition and CMP, annealing in oxygen and argon, ozone or a forming gas before metal deposition, or heat soaking in silane or disilane, before metal deposition.
|
申请公布号 |
US6830998(B1) |
申请公布日期 |
2004.12.14 |
申请号 |
US20030462667 |
申请日期 |
2003.06.17 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PAN JAMES;BESSER PAUL;WOO CHRISTY MEI-CHU;NGO MINH VAN;YIN JINSONG |
分类号 |
H01L21/28;H01L21/3205;H01L21/336;H01L29/49;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|