FORMING METHOD OF OXIDE LAYER USING THERMAL OXIDATION AND RADICAL OXIDATION AND MANUFACTURING METHOD OF TRANSISTOR USING THE SAME

摘要

PURPOSE: A forming method of an oxide layer and a manufacturing method of a transistor using the same are provided to reduce leakage current, thereby improving the quality of the oxide layer by repairing the defects in the interface between a substrate and the oxide layer. CONSTITUTION: An oxide layer(64) is formed on a substrate(60) by a thermal oxidation process. Herein, dangling bonds or oxide vacancies due to incompletely oxidized silicon in the interface between the oxide layer and the substrate are generated. After the thermal oxidation process, the oxide layer is exposed to oxygen radicals to repair the defects by radical oxidation. When the oxide layer is formed in trench of the substrate, the oxide layer on the corner(C) of the substrate becomes rounding.