METHOD FOR TESTING MEMORY CELL OF SEMICONDUCTOR MEMORY DEVICE, ESPECIALLY INCLUDING A MEMORY CELL ARRAY, MUX, AND REPAIR FUSE BOX

摘要

PURPOSE: A method for testing the memory cell of a semiconductor memory device is provided to improve the productivity by reducing the test time so as to allow the parallel bit test when the semiconductor memory cell performs a block free repair. CONSTITUTION: The device includes a memory cell array(10), mux(12), and repair fuse box(14). A method for testing the memory cell of a semiconductor memory device includes the steps of: repairing the fail cell of the specific block or the fail cell of another memory block by the spare cell; and performing the parallel bit test by accessing the data through the input/output line by each block of the memory cell array after the failed memory cells are repaired by the spare cells.