| 摘要 |
PURPOSE: A positive photoresist composition and a method for forming a resist pattern using the same are provided to improve DOF(depth of focus) characteristics, resolution and residual image rate. CONSTITUTION: The positive photoresist composition comprises (A) an alkali-soluble resin, (B) esterified naphthoquinonediazide, (C) a phenolic hydroxy group-containing compound having a molecular weight of 1000 or less, which is represented by the formula III, and (D) an organic solvent. In the formula III, R21 to R28 are each independently hydrogen, halogen, C1-C6-alkyl, C1-C6-alkoxy or C3-C6-cycloalkyl, R29 to R32 are each independently hydrogen or C1-C6-alkyl, each of e, f and h is an integer of 1-3, and m is an integer of 1-5. The method for forming a resist pattern comprises the steps of: applying the photoresist composition onto a substrate; pre-baking the applied substrate to form a resist film; selective exposing through a mask having both resist patterns for IC below 2.0 m and for LCD above 2.0 m; baking post exposure; and developing using an aqueous alkali solution.
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