发明名称 SEMICONDUCTOR MEMORY DEVICE FOR OUTPUTTING DATA BITS WITH LOWER RATE IN TEST MODE AND METHOD FOR OPERATING THE SAME, ESPECIALLY INCLUDING A MEMORY CELL OUTPUTTING DATA BIT IN PARALLEL
摘要 PURPOSE: A semiconductor memory device for outputting data bits with lower rate in a test mode and a method for operating the same are provided to expand the effective output data window in the test mode by outputting data bits with lower rate than that of the normal mode. CONSTITUTION: A semiconductor memory device for outputting data bits with lower rate in a test mode includes a memory cell array(211) and an output circuit(213). The memory cell array outputs a plurality of data bits with a first data rate in parallel. And, the output circuit outputs the plurality of the data bits to the external terminal with the first data rate in serial in a normal mode and outputs the plurality of the data bits to the external terminal with a second data rate lower than the first data rate in the test mode.
申请公布号 KR20040104903(A) 申请公布日期 2004.12.13
申请号 KR20040037685 申请日期 2004.05.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG, SANG SEOK;KIM, CHI UK;LEE, JAE UNG
分类号 G01R31/28;G11C7/10;G11C7/22;G11C11/40;G11C11/401;G11C11/407;G11C11/409;G11C29/00;G11C29/14;(IPC1-7):G11C11/40 主分类号 G01R31/28
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