| 摘要 |
<p>PURPOSE:To sufficiently reduce the offset current of pixel TFTs and to obtain uniform electrical characteristics by constructing the pixel TFT from TFT an offset type and TFTs constructing peripheral circuit from TFTs of a non- offset type. CONSTITUTION:The pixel TFT-A is a channel type TFT and an offset gate type and the TFT-B and TFT-C constituting the peripheral circuits are a N channel type TFT and P channel type TFT, respectively, of a non-offset gate type. The TFT-A is longer in the length of the channel region 106 than the width of a gate electrode 112 and has a so-called offset structure and is small in off current. The TFT-and TFT-C constituting the peripheral circuits have a standard self-alignment structure and the large ion current is obtainable thereon. Namely, the TFTs with which the changes written into the pixel electrodes are sufficiently held and the peripheral circuits are capable of operating at a high speed and which have the excellent uniformity of the electrical characteristics are obtd.</p> |
