METHOD FOR DEPOSITING SILICON NITRIDE LAYER BY SUPPLYING SILANE GAS AND GAS CONTAINING NITROGEN AS SOURCE MATERIALS TO INNER SPACE OF REACTOR

摘要

PURPOSE: A method for depositing a silicon nitride layer is provided to increase a deposition speed and maximize productivity by preheating a source gas before supplying the source gas to a process chamber. CONSTITUTION: The first process gas is preheated by the first gas preprocess unit(130) installed at an outside of a reaction area of a process chamber before the first process gas is supplied to the reaction area of the process chamber. A temperature for preheating the first process gas is lower than a temperature for decomposing the first process gas within the reaction area.