发明名称 METHOD FOR PREPARING ORGANOSILICATE FILM HAVING LOW DIELECTRIC PROPERTIES TO ENHANCE MECHANICAL PROPERTIES
摘要 <p>PURPOSE: A method for preparing an organosilicate glass film having low dielectric properties is provided to enhance mechanical properties by controlling the amount of organic groups. CONSTITUTION: The method for preparing an organosilicate glass film having low dielectric ratio such as 4.0 or less comprises: preparing one of mixtures selected from (i) a mixture of a first silicon-containing precursor which comprises 3-4 numbers of Si-O bonds per Si atom, 0-1 number of a bond selected from Si-H, Si-Br or Si-Cl bond per Si atom, and 0 number of Si-C bond, and a second silicon-containing precursor which comprises at least one Si-C bond per Si atom; (ii) a mixture of asymmetric silicon-containing precursor which has the ratio of Si-C to Si atom by number is 1 or less; introducing the mixture into a reacting chamber which contains a substrate therein; and supplying energy to induce a reaction, and conduct deposition of the organosilicate glass film onto the substrate.</p>
申请公布号 KR20040104402(A) 申请公布日期 2004.12.10
申请号 KR20040038616 申请日期 2004.05.29
申请人 AIR PRODUCTS AND CHEMICALS, INC. 发明人 BITNER, MARKDANIEL;LUKAS, AARONSCOTT;O'NEILL, MARK LEONARD;PETERSON, BRIANKEITH;VINCENT, JEANLOUISE;VRTIS, RAYMONDNICHOLAS
分类号 C07F7/04;C03C3/04;C07F7/18;C08G77/02;C08G77/06;C08J5/18;C23C16/40;C23C16/42;H01L21/312;H01L21/316;(IPC1-7):C08J5/18 主分类号 C07F7/04
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