METHOD FOR FABRICATING SEMICONDUCTOR DEVICE FOR ACCURATELY SETTING RESISTANCE VALUE OF RESISTANCE ELEMENT AND FOR SUPPRESSING UNEVENNESS IN RESISTANCE VALUE ON SURFACE OF WAFER

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to set a resistance of a resistance element with high accuracy by forming the resistance element on a transistor and an isolation layer. CONSTITUTION: An isolation layer(2) is formed in a main surface of a semiconductor substrate(1). A gate insulating layer is formed on the main surface of the semiconductor substrate. A semiconductor layer is formed on the isolation insulating layer and on the gate insulating layer. A resistance element is formed on the isolation layer and a gate electrode is formed on the gate insulating film by patterning the semiconductor layer. A mask material is formed so as to cover the resistance element. A first source/drain region is formed in the main surface of the semiconductor substrate by ion-implanting first impurities of a first conductive type. A sidewall spacer is formed on a side surface of the resistance element. A second source/drain is formed by an ion implantation using second impurities of the first conductivity type. A thermal treatment is performed to activate the second impurities.