SEMICONDUCTOR SINGLE CRYSTAL GROWTH APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor single crystal growth apparatus which can control a v/G (crystal growth rate/temperature gradient in crystal) value during single crystal growth and can stably produce a semiconductor single crystal in high yields. SOLUTION: The semiconductor single crystal growth apparatus is provided with an electric current supply means for supplying an electric current between a single crystal and a melt of a raw material. The raw material passes an electric current between the single crystal and the melt of the raw material to effect the Peltier effect. During the step of growing the single crystal by using a single crystal growth means according to the measured value from a diameter measurement means, the current value and the direction of the electric current of the electric current supply means are controlled to heat or cool the interface between the single crystal and the melt of the raw material by the Peltier effect to control the shape of the solid/liquid interface between the single crystal and the melt of the raw material. COPYRIGHT: (C)2005,JPO&NCIPI