发明名称 |
AMPLIFIER CIRCUIT |
摘要 |
An amplifier circuit and fabrication method including a bias input node, an RF input node, an RF output node, and a plurality of amplifier cells. Each cell has a plurality of discrete emitter contacts of a first conductivity type, a plurality of discrete base contacts of a second conductivity type and grouped in two or more groups, at least one collector contact of the first conductivity type connected to the RF output node, and a base capacitor for each group having two electrodes: an input electrode coupled to the RF input node and an output electrode coupled to a group of discrete base contacts. There is also a base resistor for each group having an input coupled to the bias input node and an output coupled to a group of discrete base contacts. An emitter resistor is coupled to each discrete emitter contact to provide more effective base ballasting and thermal stability than with a cascode arrangement of HBT transistors. |
申请公布号 |
WO2004086606(A3) |
申请公布日期 |
2004.12.09 |
申请号 |
WO2004US08304 |
申请日期 |
2004.03.18 |
申请人 |
ANALOG DEVICES, INC.;ZHANG, SHUYUN;MCMORROW, ROBERT, JEFFERY |
发明人 |
ZHANG, SHUYUN;MCMORROW, ROBERT, JEFFERY |
分类号 |
H03F1/30;H03F3/19;H03F3/21 |
主分类号 |
H03F1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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