发明名称 RESIST MATERIAL AND METHOD FOR FORMING PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist material suitable as a positive resist, in particular, a chemically amplifying positive resist material having high sensitivity, high resolution, exposure latitude and process adaptability superior to a conventional positive resist material, showing a preferable pattern form after exposure, and having a wide baking temperature range. <P>SOLUTION: The material contains a polymer compound containing a repeating unit expressed by formula (1) and having 1,000 to 500,000 weight average molecular weight. In formula (1), R<SP>1</SP>represents H, OH, an alkyl group, a halogen atom or a trifluoromethyl group, R<SP>2</SP>represents H, OH, a halogen atom or a trifluoromethyl group, Y represents a methyl group, an ethyl group, or a propyl group, and n represents 0 or a positive integer 1 to 4. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004348014(A) 申请公布日期 2004.12.09
申请号 JP20030147140 申请日期 2003.05.26
申请人 SHIN ETSU CHEM CO LTD 发明人 TAKEDA TAKANOBU;WATANABE OSAMU;MANBA DAISUKE
分类号 G03F7/039;G03F7/033;H01L21/027 主分类号 G03F7/039
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