| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that an IC package substrate made by an etch back method has no compatibility with high-density wiring and has a low reliability due to the exposure of copper outside a sealing section of an IC package and has a low yield, since an electrolytic plating wire has a problem such as a large etching thickness, and at the same time an electroless plating method has a problem such as lacking in bonding stability and being expensive. SOLUTION: In the IC package substrate, an electrolytic pattern and an exposure pattern are formed of solder resist, and a temporary electrolytic plating wire is formed by electroless plating, and then an opening is formed in the electrolytic pattern by a resist and the pattern is electrolytically plated, resulting in making the etching thickness of the electrolytic plating wire small and enabling high-density wiring. Consequently, a low-cost and reliable IC package substrate with a good bonding stability can be obtained. A problem of a poor pattern positional accuracy can be solved by not directly connecting the electrolytic pattern and the exposure pattern. COPYRIGHT: (C)2005,JPO&NCIPI |
