| 摘要 |
PROBLEM TO BE SOLVED: To provide a polysilicon thin film transistor having a self-alignment offset region. SOLUTION: As a process for fabricating a thin film transistor, a substrate is provided, an effective layer is formed on the substrate, and a gate insulating layer is formed on the effective layer wherein at least a center area and a shield area are defined on the gate insulating layer and the shield area is located on the outer circumference of the center area. An etching process is then performed to expose the shield area while covering the center area of the gate insulating layer with the gate layer. Subsequently, ion implantation process is performed to form a doped area in the effective layer not covered with the shield area and the gate layer thus changing the effective layer not covered with the shield area into an offset region. COPYRIGHT: (C)2005,JPO&NCIPI
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