发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To suppress an increase in resistance of a wiring and a connection plug, while suppressing an occurrence of voids by a stress migration in a wiring structure having the wiring and connection plug made of copper. SOLUTION: A second interlayer insulating film 5 is formed on a first copper wiring 2 formed in a first interlayer insulating film 1 through a barrier insulating film 4. A second copper wiring 6 and a connection plug 7 made of copper are formed in the second interlayer insulating film 5. An alloy layer 10 made of copper is formed in only a portion connected to the connection plug 7 above the first copper wiring 2. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004349609(A) 申请公布日期 2004.12.09
申请号 JP20030147423 申请日期 2003.05.26
申请人 RENESAS TECHNOLOGY CORP 发明人 FUJISAWA MASAHIKO
分类号 H01L21/3205;H01L21/4763;H01L21/768;H01L23/52;(IPC1-7):H01L21/768;H01L21/320 主分类号 H01L21/3205
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