| 摘要 |
A method of anisotropiocally etching a semiconductive substrate uses a hydrofluorocarbon etch gas with an etch selectivity fluorocarbon gas. The fluorocarbon gas is used under conditions that enhance selectivity of the etch to an etch stop layer with respect to a bulk dielectric material such as doped or undoped silicon dioxide. In one method, a silicon dioxide dielectric layer is provided upon an etch stop layer, wherein the etch stop layer comprises silicon dioxide that is doped differently from the silicon dioxide dielectric layer. A gaseous etchant including a hydrofluorocarbon etch gas and a fluorocarbon selectivity compound is provided, and the silicon dioxide dielectric layer is exposed to the gaseous etchant.
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