NANOCRYSTALLINE LAYERS FOR IMPROVED MRAM TUNNEL JUNCTIONS

摘要

An improved and novel device and fabrication method for a magnetic element (100), and more particularly a magnetic element with a crystallographically disordered seed layer (120) and/or template layer (122) seeding the nanocrystalline growth of subsequent layers, including a pinning layer (124), a pinned layer (125), and fixed layer (126).