| 摘要 |
<p>A position information measuring method capable of easily obtaining information on a relative position deviation between two marks by using scatterometry or reflectometry. Marks (25A) are formed on a wafer (W) at a pitch P1, and marks (28A) are formed on an intermediate layer (27) over them at a pitch P2 different from the pitch P1. A detection light (DL) is allowed to vertically enter the wafer (W) and a regular reflection light (22) from two marks (25A, 28A) only is spectrally separated on a wavelength basis for photoelectric converting. Wavelength-based reflectances are obtained from obtained detection signals, a reflectance at a specified wavelength is determined for each position in the measuring direction (X direction) of marks (25A, 28A), the shape of a Moire pattern formed by the overlapping of two marks (25A, 28A) is determined from the obtained reflectance distribution, and the position deviation amount of a mark (28A) is determined from the shape.</p> |
