| 发明名称 |
CIRCUIT CONFIGURATION FOR A CURRENT SWITCH OF A BIT/WORD LINE OF A MRAM DEVICE |
| 摘要 |
<p>A circuit configuration for a current switch of a bit line or a word line of a magnetoresistive random access memory (MRAM) device, comprising a directional switch and a voltage driver that, in operation, reduces the ON resistance of the directional switch. In one embodiment, each terminal of the line is provided with such a switch.</p> |
| 申请公布号 |
WO2004107348(A1) |
申请公布日期 |
2004.12.09 |
| 申请号 |
WO2004EP05675 |
申请日期 |
2004.05.26 |
| 申请人 |
INFINEON TECHNOLOGIES AG;INTERNATIONAL BUSINESS MACHINES CORPORATION;DEBROSSE, JOHN;VIEHMANN, HANS-HEINRICH |
发明人 |
DEBROSSE, JOHN;VIEHMANN, HANS-HEINRICH |
| 分类号 |
G11C8/08;G11C7/12;G11C11/15;G11C11/16;G11C11/40;(IPC1-7):G11C11/15 |
主分类号 |
G11C8/08 |
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