发明名称 PLASMA-ETCHING TREARMENT APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus and a plasma treatment method with which highly precise ultra-fine pattern formation is carried out easily on a sample with a large diameter, and a selection ratio at the time of ultra-fine processing is improved. <P>SOLUTION: This plasma treatment apparatus comprises a vacuum treatment chamber, a sample table for setting a sample to be treated in the vacuum treatment chamber, a plasma generating means including a high frequency electric power source, an electrostatic absorption means for holding the sample on the sample table by the electrostatic absorbability, and a pulse bias applying means for applying a pulse bias voltage on the sample. As the high frequency electric power source, a 10 MHz-500 MHz high frequency voltage is applied, and the pressure in the the vacuum treatment chamber is reduced to 0.5-4.0 Pa. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004349717(A) 申请公布日期 2004.12.09
申请号 JP20040206943 申请日期 2004.07.14
申请人 HITACHI LTD 发明人 KAJI TETSUNORI;WATANABE KATSUYA;MITANI KATSUHIKO;OTSUBO TORU;TAJI SHINICHI;TANAKA JUNICHI
分类号 H05H1/46;H01L21/3065 主分类号 H05H1/46
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