| 摘要 |
PROBLEM TO BE SOLVED: To provide a liquid phase epitaxial growing device and a method therefor for growing crystal on the whole of a substrate face while crystal growth on the rear face of a substrate is suppressed. SOLUTION: The liquid phase epitaxial growing device 1 which epitaxially grows crystal on the lengthwise substrate S is provided with a growing chamber 20 for storing the substrate S stood against a back plate 52a lengthways and a growing solution sink 30 accumulating raw material solution L of crystal grown on the substrate. The growing chamber 20 has a flow-in port 25i to which raw material solution L accumulated in the growing solution sink 30 flows at a lower region of the growing chamber 20. Thus, raw material solution L which is gradually accumulated from the base of the growing chamber 20 suppresses the substrate S to a back plate 52a, and the substrate S can be prevented from being separated from the back plate 52a. COPYRIGHT: (C)2005,JPO&NCIPI
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