SEMICONDUCTOR STORAGE ELEMENT, SEMICONDUCTOR DEVICE, THEIR MANUFACTURING METHODS, PORTABLE ELECTRONIC EQUIPMENT, AND IC CARD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor storage element that is hardly lowered in memory characteristics. SOLUTION: The semiconductor storage element is provided with memory function groups 11 on both sides of a gate electrode 3 formed on a semiconductor substrate 1 through a gate insulating film 2. The memory function groups 11 are composed of charge holders constituted by forming inclusive insulating films 21 having nearly uniform thicknesses on the surfaces of silicon dots 10 having charge accumulating functions, and side-wall insulators 16 covering the charge holding sections. The semiconductor storage element is also provided with offset regions 20 formed by offsetting the ends of source/drain regions 13 with respect to the ends of the gate electrode 3 in the longitudinal direction of a gate. The storing states of the memory function groups 11 are detected by detecting the current quantity between the two source/drain regions 13 which changes depending upon the quantity of charges held in the charge holding sections. The fall of the memory characteristics of the semiconductor storage element is prevented by preventing the dissipation of the charges accumulated in the silicon dots 10 by means of the inclusive insulating films 21. COPYRIGHT: (C)2005,JPO&NCIPI