| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering apparatus for uniformizing a film thickness, film quality and film characteristics, by uniformizing the concentration of a reactive gas flowing along the surface of a target and thereby improving the uniformity of the reaction of the reactive gas with the target, when introducing a sputtering gas and the reactive gas into a vacuum chamber so as to form a film by reactive sputtering. SOLUTION: The sputtering apparatus for depositing the film on a substrate by arranging a cathode 21 provided with at least one target 22 so as to face the substrate 12, and sputtering the target on the basis of reactive sputtering, has a central gas-introduction mechanism for making the reactive gas supplied from a reactive gas feeding device 23 flow outward from the central part of a cathode unit 14 along the surface of the target 22. COPYRIGHT: (C)2005,JPO&NCIPI
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