发明名称 |
Method for detecting Cu concentration of silicon substrate |
摘要 |
To expediently and quantitatively estimate Cu within a silicon substrate without fully dissolving the silicon substrate and to ascertain the process contamination, there is provided a method for quantitatively determining the Cu concentration in a Cu containing silicon substrate having obverse and converse surfaces, the silicon substrate contains at least 3x10<18 >atoms/cm<3 >of boron and is heated at a temperature of no more than 600° C., the improvement comprises heating the converse surface of the substrate at a temperature between 300° C. to 350° C. for a period of 1 to 12 hours and then quantitatively analyze the Cu concentration at obverse and converse surfaces of the heated substrate.
|
申请公布号 |
US2004248311(A1) |
申请公布日期 |
2004.12.09 |
申请号 |
US20040844813 |
申请日期 |
2004.05.12 |
申请人 |
MOHAMMAD SHABANI B.;SHIINA YOSHIKAZU |
发明人 |
MOHAMMAD SHABANI B.;SHIINA YOSHIKAZU |
分类号 |
H01L21/66;G01N23/223;G01N33/20;(IPC1-7):G01N33/20 |
主分类号 |
H01L21/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|