发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is improved in a mechanical strength by increasing the connecting areas of a protruding electrode of a semiconductor chip and a protruding electrode of a substrate. <P>SOLUTION: In the semiconductor device, the semiconductor chip (MEMS substrate 4) having electrode pads 11a-11c is mounted on a circuit substrate 6 having connecting pads 12a-12c at positions opposed to the electrode pads 11a-11c via bumps. The bump includes first protruding electrodes (Au bumps 15a-15c) provided at the electrode pads 11a-11c, second protruding electrodes (Au bumps 16a-16c) provided at the connecting pads 12a-12c, and conductive connecting members (Sn-Bi solders 17a-17c) solid phase diffusion connecting these two protruding electrodes. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004349390(A) 申请公布日期 2004.12.09
申请号 JP20030143379 申请日期 2003.05.21
申请人 OLYMPUS CORP 发明人 HATAKEYAMA TOMOYUKI
分类号 B81B7/00;H01L21/60;H01L21/68 主分类号 B81B7/00
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