METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can suppress a decrease in an impurity concentration of a channel doped region due to the formation of a gate insulating film.

SOLUTION: In the state that a silicon oxide film 20 and a silicon nitride film 21 are formed, p-type impurities 231, 232are ion implanted from obliquely above of a Y direction. As the implanting angle α of the ion implantation, the implanting angle of a range in which the relation of tan-1(W2/T)<α-1(W1/T) is satisfied when an interval between a first part 211and a fourth part 214and an interval between a third part 213and a sixth part 216are W1, an interval between a second part 212and a fifth part 215is W2, and total film thickness of the silicon oxide film 20 and the silicon nitride film 21 is defined by T and adopted. When the implanting angle α is specified in this range, the impurities 231, 232are ion implanted in the second side face 10A2and the fifth side face 10A5through the silicon oxide film 13.

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