| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce the time for verifying a rewrite operation to a memory element after the rewrite operation is carried out to the memory device. <P>SOLUTION: This semiconductor storage device is provided with: a memory array including a plurality of memory elements; a write state machine for applying, through a bit line, a second voltage for verifying whether a write operation or erase operation has been carried out after a first voltage for carrying out the rewrite operation or erase operation has been applied through the bit line; and a reset part for grounding the bit line after the first voltage is applied and before the second voltage is applied. Each of the plurality of memory elements includes a gate electrode formed on a semiconductor layer through a gate insulation film, a channel area arranged under the gate electrode, a diffusion area arranged on both sides of the channel area and having a conduction type reverse to the channel area, and a memory functional body formed at both sides of the gate electrode and for holding an electric charge. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
