| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which can be made minute easily and in which an instruction about memory operation can be received from a data bus connected to an external processor or the like. <P>SOLUTION: This device is provided with a memory cell array 11 in which a plurality of memory elements are arranged, a memory operation circuit means connected to the memory array 11 and performing memory operation about the memory cell array 11, and a command control means 30 connected to the memory operation circuit means, receiving a command from the outside, and generating the prescribed control signal for the memory operation circuit means based on the received command to control performing of memory operation of the memory operation circuit means, the memory element comprises a gate electrode formed on a semiconductor layer through a gate insulation film, a channel region arranged under the gate electrode, a diffusion region arranged at both sides of the channel region and having a channel region and a reverse conduction type, and a memory function object having a function holding electric charges formed at the both sides of the gate electrode. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
