| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor substrate with an SiGe layer that makes the SiGe layer thin in the thickness, alleviates distortion, and reduces the threading dislocation density. SOLUTION: In the manufacturing method of the semiconductor substrate, a silicon substrate is immersed in pure water, an ultrasonic wave is applied to the substrate, thereafter OSF cores are formed on the surface of the silicon substrate by applying heat treatment to the substrate, and the SiGe layer or the SiGe layer, and a Si layer are formed on the silicon substrate. COPYRIGHT: (C)2005,JPO&NCIPI
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