发明名称 |
Methods of forming a conductive structure in an integrated circuit device |
摘要 |
A conductive structure is formed in an integrated circuit device by forming a lower conductive pattern on a substrate. A barrier metal layer is formed on the lower conductive pattern. The barrier metal layer is flushed with a gas that includes a halogen group gas and an upper conductive layer is formed on the barrier metal layer.
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申请公布号 |
US2004248397(A1) |
申请公布日期 |
2004.12.09 |
申请号 |
US20040796437 |
申请日期 |
2004.03.09 |
申请人 |
SEO JUNG-HUN;CHOI GIL-HEYUN;LEE JONG-MYEONG;PARK HEE-SOOK |
发明人 |
SEO JUNG-HUN;CHOI GIL-HEYUN;LEE JONG-MYEONG;PARK HEE-SOOK |
分类号 |
H01L21/28;H01L21/285;H01L21/321;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L29/74 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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