发明名称 |
Method of fabricating metal-insulator-metal capacitor (MIM) using lanthanide-doped HfO2 |
摘要 |
Briefly, a preferred embodiment of the present invention includes a metal-insulator-metal (MIM) capacitor including a bottom layer of conductive material formed by depositing this conductive material on a substrate. A dielectric material is then formed on the bottom conductive layer, wherein the dielectric material is preferably an HfO2 dielectric doped with lanthamide material, more preferably Th doped HfO2 with a Th concentration in the range of 0 to 6% and more particularly substantially 4%. A top conductive layer is formed on top of the dielectric.
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申请公布号 |
US2004245602(A1) |
申请公布日期 |
2004.12.09 |
申请号 |
US20040843861 |
申请日期 |
2004.05.11 |
申请人 |
KIM SUN JUNG;CHO BYUNG JIN;LI MING-FU;YIN MINGBIN |
发明人 |
KIM SUN JUNG;CHO BYUNG JIN;LI MING-FU;YIN MINGBIN |
分类号 |
H01L21/02;H01L21/3115;H01L21/316;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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