| 发明名称 |
Ferroelectric film, method of manufacturing ferroelectric film, ferroelectric capacitor, method of manufacturing ferroelectric capacitor, and ferroelectric memory |
| 摘要 |
A method of manufacturing a ferroelectric film includes crystallizing a raw material having a complex oxide, the method including: performing a heat treatment in a first condition in which a predetermined pressure and a predetermined temperature are applied; and maintaining a second condition, in which a pressure and a temperature lower than the pressure and the temperature in the first condition are applied, after the heat treatment in the first condition, and the raw material is crystallized by repeating the heat treatment in the first condition and the maintaining the second condition.
|
| 申请公布号 |
US2004248360(A1) |
申请公布日期 |
2004.12.09 |
| 申请号 |
US20040808417 |
申请日期 |
2004.03.25 |
| 申请人 |
SEIKO EPSON CORPORATION |
发明人 |
OHASHI KOJI;KIJIMA TAKESHI;KARASAWA JUNICHI;HAMADA YASUAKI;NATORI EIJI |
| 分类号 |
H01L27/105;H01L21/02;H01L21/28;H01L21/314;H01L21/316;H01L21/8246;(IPC1-7):H01L21/20;H01L21/00;H01L21/31;H01L21/824 |
主分类号 |
H01L27/105 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
