INDIUM PHOSPHIDE SUBSTRATE, INDIUM PHOSPHIDE SINGLE CRYSTAL AND PROCESS FOR PRODUCING THEM

摘要

An indium phosphide substrate of low dislocation density excelling in the wafer in-plane and thickness-direction uniformity of dopant concentration, which indium phosphide substrate is used for obtaining a compound semiconductor device excelling in wafer in-plane uniformity of properties, stability and operating life; and a process for producing the same. An indiu m phosphide single crystal of low dislocation density excelling in the wafer i n- plane and thickness-direction uniformity of dopant concentration is produced through a process comprising securing to a lower end of growth vessel a seed crystal having a given sectional area ratio to crystal body so that the direction of crystal growth is set for (100)-orientation; placing an indium phosphide raw material, a dopant and boron oxide in the growth vessel; disposing the growth vessel in a crystal growth furnace; heating at temperature equal to or higher than the melting point of indium phosphide so as to melt the boron oxide, indium phosphide raw material and dopant; and lowering the temperature of the growth vessel.