| 摘要 |
<P>PROBLEM TO BE SOLVED: To stably form an HSG-Si on the surface of the lower electrode of a capacitor. <P>SOLUTION: After depositing a non-doped a-Si film on a lower-electrode pattern subjected to a fine processing, such oxide films as a natural oxide film present on the surface of the a-Si film are removed therefrom by a rare hydrofluoric acid. Then, a chemical oxide film is produced on the surface of the a-Si film by a hydrogen-peroxide processing. Thereafter, the chemical oxide film of the surface of the non-doped a-Si film is so removed therefrom by using an argon-excimer lamp that the cleaned surface of the a-Si film appears thereon. Subsequently, the a-Si film is so subjected to a heat treatment in a high-vacuum reaction furnace that an HSG-Si comprising a plurality of irregular crystal grains is formed based on HSG nuclei on the surface of the non-doped a-Si film. In this way, the lower electrode of a capacitor which has an irregularity on its surface is formed stably. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
