| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve a problem that the removal of polymer residuals left after dry-etching of films to be worked including a tantalum oxide film is difficult. <P>SOLUTION: An HDP-NSG (high-density plasma-NSG) film 2, a tantalum oxide film 3, a titanium nitride film 4, and an NSG film 5 as a sacrifice film formed by the CVD (chemical vapor deposition) method are successively laminated on a silicon substrate 1. Resist 6 is patterned on the NSG film 5, the NSG film 5, the titanium nitride film 4 and the tantalum oxide film 3 are dry-etched by using the resist 6 as a mask, and then the resist 6 is removed by plasma ashing. Then the NSG film 5 is etched and removed by using a mixed solution of 0.1% HF and 0.7% HCL, so that polymer residuals 7 on the NSG film 5 can be removed together with the NSG film. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
