| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a capacitor which can avoide the generation of a leakage current resulting from the sharpened part of the lower electrode of a capacitor and an electrical short-circuit between electrodes and lowering of crystallization of a capacitor dielectric material film resulting from residues. <P>SOLUTION: A ruthenium oxide film 9 is formed by surface oxidation of a ruthenium film 7 with the low temperature plasma oxidation method. If a part of the residues 51 is left on the surface of the ruthenium film 7, the remaining residues 51 is eliminated through the lift-off by forming the ruthenium oxide film 9 including a large amount of RuO4 of high vapor pressure. Moreover, the low temperature plasma oxidation method has larger unistropy for the oxidation rate in the vertical direction than that in the lateral direction. Therefore, the upper end of the side wall of the ruthenium film 7 is rounded through large oxidation in the vertical direction. As a result, the sharpened part 50 is lost. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
