SEMICONDUCTOR STORAGE DEVICE, SEMICONDUCTOR DEVICE, THEIR MANUFACTURING METHODS, PORTABLE ELECTRONIC EQUIPMENT, AND IC CARD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor storage device that is remedied in excessive erasure and erroneous readout caused by the excessive erasure; and to provide a semiconductor device, methods of manufacturing the storage device and semiconductor device, portable electronic equipment, and an IC card.

SOLUTION: The semiconductor storage device is provided with a gate insulating film formed on a semiconductor substrate, a gate electrode formed on the insulating film, and a channel forming region disposed under the gate electrode. The device is also provided with a pair of source/drain diffusing regions disposed on both sides of the channel forming region and having conductivity opposite to that of the channel forming region, and a semiconductor storage element provided with memory function groups constituted of charge holders composed of a material having a charge accumulating function and dissipation preventing insulators having functions of preventing the dissipation of accumulated charges on both sides of the gate electrode. The intervals (T2) between the side walls of the gate electrode and the charge holders in face to face the side walls are made different from the intervals (T1) between the lower sections of the charge holders positioned on the semiconductor substrate side and the surface of the semiconductor substrate.

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