| 摘要 |
PROBLEM TO BE SOLVED: To eliminate a mask for doping from a manufacturing process, without complicating the manufacturing process in a manufacturing method of a semiconductor device having a P-channel transistor and a N-channel transistor on the same substrate. SOLUTION: After forming an interlayer insulating film by covering a gate insulating film and gate electrodes, at least one of the gate electrodes is exposed by patterning the interlayer insulating film. Thereafter, an impurity is implanted in a semiconductor layer under the exposed gate electrode, with the interlayer insulating film and the gate electrode as masks. COPYRIGHT: (C)2005,JPO&NCIPI
|
