发明名称 |
Slotted electrostatic shield modification for improved etch and CVD process uniformity |
摘要 |
A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.
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申请公布号 |
US2004244691(A1) |
申请公布日期 |
2004.12.09 |
申请号 |
US20040803453 |
申请日期 |
2004.03.18 |
申请人 |
GEORGE RENE;KADAVANICH ANDREAS;DEVINE DANIEL J.;SAVAS STEPHEN E.;ZAJAC JOHN;SHAN HONGCHING |
发明人 |
GEORGE RENE;KADAVANICH ANDREAS;DEVINE DANIEL J.;SAVAS STEPHEN E.;ZAJAC JOHN;SHAN HONGCHING |
分类号 |
H01J37/32;H05H1/46;(IPC1-7):C23C16/00 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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