发明名称 Method of manufacturing bulk single crystal of gallium nitride
摘要 The present invention provides a process for forming a bulk monocrystalline gallium nitride by using supercritical ammonia. The process comprises the steps of forming a supercritical solvent containing ion or ions of alkali metals in an autoclave; and dissolving a monocrystalline gallium nitride prepared by flux methods as a feedstock in this supercritical solvent to form a supercritical solution, and simultaneously or separately recrystallizing gallium nitride on the face of a seed.
申请公布号 US2004244680(A1) 申请公布日期 2004.12.09
申请号 US20040479856 申请日期 2004.06.04
申请人 DWILINSKI ROBERT;DORADZINSKI ROMAN;GARCZYNSKI JERZY;SIERZPUTOWSKI LESZEK;KANBARA YASUO 发明人 DWILINSKI ROBERT;DORADZINSKI ROMAN;GARCZYNSKI JERZY;SIERZPUTOWSKI LESZEK;KANBARA YASUO
分类号 C30B7/10;C30B9/00;(IPC1-7):B32B9/00;C30B29/38 主分类号 C30B7/10
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