METHOD OF SIMULATION WITH RESPECT TO DENSITY DISTRIBUTION AND SIZE DISTRIBUTION OF VOID DEFECT WITHIN SINGLE CRYSTAL AND OXYGEN PRECIPITATION NUCLEUS WITHIN SINGLE CRYSTAL

摘要

The density distribution and size distribution with respect to void defects consisting of inside wall oxide film and voids within single crystals can be accurately estimated. In the 1st to 7th steps, taking the convection of melt (12) into account, the temperature distribution within single crystal (14) growing from the melt from the pull-up of single crystal through the completion of cooling thereof is determined by the use of a computer. In the 8th to 15th steps, taking into account the cooling process for single crystal cut off the melt, specifically the pull-up speed of single crystal after the cutting of single crystal off the melt, the void density is determined by the use of a computer while reflecting the effects of slow cooling and rapid cooling of single crystal on results, and thereafter the void radii and the thicknesses of inside wall oxide films growing around such voids are determined in mutual relationship by the use of a computer.